The failure mechanism and device mechanics of ferroelectric thin film field-effect transistor memory 铁电薄膜场效应晶体管存储器件的失效机制及器件力学
Thin Film Polymer Memory 薄膜聚合物存储器
A novel micropump actuated by thin film shape memory alloy has been developed. 一种用形状记忆合金薄膜驱动的新型微泵已经研制成功。
Electroless Ni Plating for Thin Film Memory Disks 薄膜硬磁盘化学镀镍
Integration of ferroelectric thin film and semiconductor creates a new generation of non volatile memories. The ferroelectric non volatile memories have some advantages over the classical semiconductor memorizers, and they are the ideal memory chip for IC card. 铁电薄膜与半导体集成产生了新一代非易失存储器,与传统的半导体非易失存储器比较具有突出的优点,是新一代IC卡的理想存储芯片。
Research of Preparation and Properties of Lower-electrode ( Pt/ Ti) of Ferroelectric Thin Film Memory 铁电薄膜存储器底电极Pt/Ti的制备及性能研究
These results suggest that the sandwich structure BLT/ PZT/ BLT thin film is a promising material combination for ferroelectric memory applications. 这些结果表明,三明治结构的BLT/PZT/BLT薄膜是一种非常适合应用于铁电存储器的铁电薄膜。
At present, the materials used to prepare ferroelectric thin film memory are mainly PZT series because they have some favorable properties, such as large remnant polarization ( Pr) value and low processing temperature. 锆钛酸铅(PZT)系铁电材料具有一系列良好的性能,如较大的剩余极化值、较低的热处理温度等,是目前铁电存储器所用的主要材料。